Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-12-05
2006-12-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S410000, C257S066000, C257S347000, C257S353000, C257S059000, C349S042000, C349S043000, C349S110000
Reexamination Certificate
active
07145176
ABSTRACT:
An active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor includes an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, a source electrode and a passivation film are successively laminated. The thin film transistor is further characterized such that the surface portion of the semiconductor layer on the side of the passivation film is porous, which enables the device to be stably driven with a low off-current even in the case of disposing an organic passivation film and a picture element electrode on the thin film transistor.
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Search Report dated Nov. 1, 2003.
Ando Masahiko
Kawasaki Masahiro
Wakagi Masatoshi
Antonelli, Terry Stout and Kraus, LLP.
Erdem Fazli
Flynn Nathan J.
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