Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-02-07
1998-06-09
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257347, 359 54, 359 57, 359 58, 359 59, 359 87, H01L 2904, H01L 2701
Patent
active
057638993
ABSTRACT:
In an active matrix display device, a circuit including at least five thin film transistors (TFTs) which are provided with an approximately M-shaped semiconductor region for a single pixel electrode and a gate line and a capacitances line which cross the M-shaped semiconductor region, is used as a switching element. Then, by supplying a selection signal to the gate line, the TFTs are operated, thereby writing data to the pixel, while if a suitable voltage is supplied to the capacitance line, a channel is formed thereunder and it becomes a capacitor. Thus the amount of discharge from the pixel electrode is reduced by this capacitor.
REFERENCES:
patent: 5132820 (1992-07-01), Someya et al.
patent: 5399889 (1995-03-01), Miyake et al.
patent: 5515187 (1996-05-01), Nakamura et al.
patent: 5528396 (1996-06-01), Someya et al.
patent: 5535028 (1996-07-01), Bae et al.
Koyama Jun
Takemura Yasuhiko
Yamazaki Shunpei
Manzo Edward D.
Martin Wallace Valencia
Murphy Mark J.
Semiconductor Energy Laboratory Co.
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