Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1991-04-02
1993-01-26
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
359 59, 359 87, H01L 2701
Patent
active
051826208
ABSTRACT:
An active matrix display includes pixel electrodes (4) which are formed over an insulating layer (17). The insulating layer (17) covers signal lines (2) which supply an image signal and also connect one pixel electrode (4) with another. The insulating layer (17) also covers an additional capacitor common line (8). The pixel electrodes (4) at least partially overlay the signal lines (2) and the additional capacitor common line (8), thereby achieving a larger numerical aperture for the display.
REFERENCES:
patent: 4470060 (1984-09-01), Yamazaki
patent: 4839707 (1989-06-01), Shields
patent: 5032883 (1991-07-01), Wakai et al.
patent: 5042918 (1991-08-01), Suzuki
N. J. Koda et al, Japanese Patent Publication No. 56-39477, published Sep. 12, 1981.
T. Shimada et al., Japanese Laid-open Patent Publication No. 1-304402 1990.
Matsushima Yasuhiro
Shimada Takayuki
Takafuji Yutaka
Bowers Courtney A.
James Andrew J.
Sharp Kabushiki Kaisha
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