Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-12
2006-12-12
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29117, C349S043000, C349S044000
Reexamination Certificate
active
07148506
ABSTRACT:
A liquid crystal device having a source line over a substrate, a gate line over the substrate, and a plurality of pixels or a pixel electrode over the substrate. A plurality of pixels may be arranged in a matrix array at intersections of source lines and gate lines. Each of a plurality of pixels may have first and second thin film transistors, a pixel electrode, and a light source. A portion of one of the source lines may cover a first thin film transistor so that the first thin film transistor is light shielded while a second transistor may not be covered by any portion of one of the source lines.
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Okumura et al., “Dynamic Leakage Current Reduction Poly-Si TFTs for AMLCDS,” Nov. 30-Dec. 1, 1994, pp. 24-27, AM-LCD 94, Digest of Technical Papers, 1994 International Workshop on Active-Matrix Liquid-Crystal Displays, Kogahuin University.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan
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