Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-04-26
2005-04-26
Tran, Minh Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C349S038000, C349S043000
Reexamination Certificate
active
06885027
ABSTRACT:
A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.
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Okumura et al., “Dynamic Leakage Current Reduction Poly-Si TFTs for AMLCDS,” Nov. 30-Dec. 1, 1994, pp. 24-27, AM-LCD 94, Digest of Technical Papers, 1994 International Workshop on Active-Matrix Liquid-Crystal Displays, Kogahuin University.
Hamatani Toshiji
Kawasaki Yuji
Konuma Toshimitsu
Koyama Jun
Takemura Yasuhiko
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh Loan
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