Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-01
1997-07-22
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257532, 257536, 349 42, 349139, H01L 2904
Patent
active
056506368
ABSTRACT:
A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.
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patent: 4938565 (1990-07-01), Ichikawa
patent: 4990981 (1991-02-01), Tanaka et al.
patent: 5173792 (1992-12-01), Matsueda
patent: 5365079 (1994-11-01), Kodaira et al.
patent: 5412493 (1995-05-01), Kunii et al.
Hamatani Toshiji
Kawasaki Yuji
Konuma Toshimitsu
Koyama Jun
Takemura Yasuhiko
Blanche Bradley D.
Ferguson Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan
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