Active matrix device utilizing light shielding means for thin fi

Details Active matrix device utilizing light shielding means for thin fi Active matrix device utilizing light shielding means for thin fi

1997-12-10

1999-11-23

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 66, 257 72, 349 44, H01L 2904

Patent

active

059904917

ABSTRACT:
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

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