Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1999-01-19
2000-12-26
Bui, Huy
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257232, 257234, H01L 2904, H01L 31036, H01L 310376, H01L 3120, H01L 27148
Patent
active
061663999
ABSTRACT:
A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.
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Kusumoto Naoto
Zhang Hongyong
Bui Huy
Costellia Jeffrey L.
Fenty Jesse A.
Ferguson Jr. Gerald J.
Peabody LLP Nixon
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