Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-01-11
1998-09-01
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257290, 257291, 257431, 257436, 257444, H01L 2714
Patent
active
058014004
ABSTRACT:
An active matrix device has switching transistors arranged into a matrix pattern on a semiconductor substrate of a first conductivity type. Data is supplied, via signal lines, to sources of the transistors. Turn-on and -off operation of the of the transistors are controlled via gate lines. Pixel electrodes are connected to drains of the transistors. The active matrix device also has semiconductor regions of a second conductivity type opposite to the first conductivity type. The semiconductor regions are formed on the semiconductor substrate so that the semiconductor regions are separated from each other by portions of the semiconductor substrate. The transistors are formed in the semiconductor regions. The semiconductor substrate and the semiconductor regions are reverse-biased with respect to each other.
REFERENCES:
patent: 5245452 (1993-09-01), Nakamura et al.
patent: 5317174 (1994-05-01), Hynecek
Victor Company of Japan Ltd.
Whitehead Jr. Carl W.
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