Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-07-26
1997-09-16
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 349 43, H01L 2904
Patent
active
056683790
ABSTRACT:
In order to provide a liquid crystal display apparatus having bright image display and a preferable production yield, a gate insulating film under a transparent pixel electrode on a transparent substrate is provided with an aperture smaller than a plane area of the pixel electrode, a source electrode pattern under the pixel electrode is composed so as to cross the aperture, and thin film transistor (TFT) having a gate electrode of which end portion is tapered with a taper angle equal to or less than three times (where, less than 90.degree.) of a taper angle at the end portion of a semiconductor pattern is provided.
REFERENCES:
patent: 5032536 (1991-07-01), Ortisuki et al.
patent: 5170244 (1992-12-01), Dohjo et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5561440 (1996-10-01), Kitajima et al.
10-in.-Diagonal 16-Gray-Level TFT-LCDs Fabricated by Novel Processing Technologies, SID 91 DIGEST pp. 14-17 by Kazuhiro Kobayashi et al. Mitsubishi Electric Corp., Amagasaki, Japan, 1991.
14.3-in.-Diagonal 16-Color TFT-LCD Panel Using a Si:H TFTs, SID 89 DIGEST pp. 226-229, by K. Ichikawa et al. Toshiba Corporation, Kawasaki Japan & Yokohama, Japan, 1989.
Veda et al., "A high aperture ratio TFT-LCD with shield electrode structure", SID 93 Digest, pp. 739-742, 1993.
Hashimoto Kenichi
Kaneko Toshiki
Minemura Tetsuro
Nakayoshi Yoshiaki
Ogawa Kazuhiro
Hitachi , Ltd.
Tran Minh-Loan
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