Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-18
2007-09-18
Rose, Kiesha (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
10713275
ABSTRACT:
An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.
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Notice of Rejection (Japanese Patent Application No. 2003-285552) mailed Apr. 17, 2007.
Arai Michio
Kobori Isamu
Fish & Richardson P.C.
Rose Kiesha
Semiconductor Energy Laboratory Co,. Ltd.
TDK Corporation
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