Active matrix circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000

Reexamination Certificate

active

10713275

ABSTRACT:
An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.

REFERENCES:
patent: 5183780 (1993-02-01), Noguchi et al.
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5396084 (1995-03-01), Matsumoto
patent: 5403762 (1995-04-01), Takemura
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5420055 (1995-05-01), Vu et al.
patent: 5466617 (1995-11-01), Shannon
patent: 5506165 (1996-04-01), Sato
patent: 5529630 (1996-06-01), Imahashi et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5637187 (1997-06-01), Takasu et al.
patent: 5670297 (1997-09-01), Ogawa et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5717224 (1998-02-01), Zhang
patent: 5717473 (1998-02-01), Miyawaki
patent: 5731613 (1998-03-01), Yamazaki et al.
patent: 5767930 (1998-06-01), Kobayashi et al.
patent: 5815223 (1998-09-01), Watanabe et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5854494 (1998-12-01), Yamazaki et al.
patent: 5904509 (1999-05-01), Zhang et al.
patent: 5932484 (1999-08-01), Iwanaga et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 5959313 (1999-09-01), Yamazaki et al.
patent: 5966594 (1999-10-01), Adachi et al.
patent: 5990491 (1999-11-01), Zhang
patent: 6051453 (2000-04-01), Takemura
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6136625 (2000-10-01), Nakazawa
patent: 6146930 (2000-11-01), Kobayashi et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6391694 (2002-05-01), Zhang et al.
patent: 6501097 (2002-12-01), Zhang
patent: 2003/0036222 (2003-02-01), Takemura
patent: 2003/0116766 (2003-06-01), Zhang
patent: 0 641 018 (1995-03-01), None
patent: 01-222432 (1989-09-01), None
patent: 2-150017 (1990-06-01), None
patent: 2-224255 (1990-09-01), None
patent: 05 009089 (1993-01-01), None
patent: 6-84793 (1994-03-01), None
patent: 6-124962 (1994-05-01), None
patent: 06-260643 (1994-09-01), None
patent: 07-066415 (1995-03-01), None
Y. Fukushima, et al., “A Poly-Si TFT Process for High Speed and Low Voltage CMOS Circuits”, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, pp. 993-995, 1993.
Notice of Rejection (Japanese Patent Application No. 2003-285552) mailed Apr. 17, 2007.

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