Active matrix cell

Details Active matrix cell Active matrix cell

1988-07-22

1990-04-17

James, Andrew J.

357 2, 357 4, 357 45, H01L 2712, H01L 2978

Patent

active

049185047

ABSTRACT:
An active matrix cell includes a first conductor group formed on a transparent substrate, two-layered regions consisting of a semiconductor film and a first insulating film, a second insulating film and a second conductor group. The first conductor group forms the source and drain of a thin film transistor, pixel electrode, data line. One of the two-layered regions serves as an active region of the thin film transistor and the other of the two-layered regions serves as the intersection between the data and scanning lines. The second insulating film is buried in the gap between the two-layered regions and the first conductor group, and has substantially a same thickness as the two-layered regions. The second conductor group forms the scanning line and the part of the data line. A method of manufacturing the active matrix cell is also disclosed.

REFERENCES:
patent: 4665419 (1987-05-01), Sasaki
patent: 4704784 (1987-11-01), Szydlo
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4788157 (1988-11-01), Nakamura
"A Large-Area High-Resolution Active-Matrix Color LCD Addressed by a-Si TFT's", T. Sunata et al., IEEE Transactions on Electron Devices, vol. ED-33, No. 8, Aug. 1986.
"An Imposed Design of Active Matrix LCD Requiring only two Photolithographic Steps", 1988 International Display Research Conference, IEEE.

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