Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-11-07
1995-10-31
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257 72, 359 59, H01L 2701, H01L 2713
Patent
active
054632307
ABSTRACT:
An active matrix board comprising pixel electrodes arranged in a matrix fashion on an insulating substrate, and scan lines each having an addition capacity electrode placed in a superposed relation with a portion of a corresponding one of the pixel electrodes, said scan lines each comprising a first scan line formed in an area other than the area in which said addition capacity electrode is held in a superposed relation with said pixel electrode, and a second scan line formed to cover said first scan line and having said addition capacity electrode as its part, whereby the possibility of pixel defect occurrence is reduced and the production yield of display apparatuses is improved.
REFERENCES:
patent: 4843438 (1989-06-01), Koden et al.
patent: 4955697 (1990-09-01), Tsukada et al.
Patent Abstract of Japan, vol. 10, No. 351 (P-520) [2407], 27th Nov. 1986; & JP-A-61 151 516 (Seiko) Oct. 7, 1986.
Kanemori Yuzuru
Katayama Mikio
Kato Hiroaki
Nagayasu Takayoshi
Nakazawa Kiyoshi
Crane Sara W.
Sharp Kabushiki Kaisha
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