Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-03-10
1997-04-01
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257776, 345 80, 345 92, 345 99, 349 42, H01L 2713, H01L 2941, G02F 1137, G09G 336
Patent
active
056169361
ABSTRACT:
An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.
REFERENCES:
patent: 3964941 (1976-06-01), Wang
patent: 3967253 (1976-06-01), Tsuruishi
patent: 4199773 (1980-04-01), Goodman et al.
patent: 4271422 (1981-06-01), Ipri
patent: 4346378 (1982-08-01), Shanks
patent: 4399605 (1983-03-01), Dash et al.
patent: 4429305 (1984-01-01), Hosokawa et al.
patent: 4507846 (1985-04-01), Ohno
patent: 4514749 (1985-04-01), Shoji
patent: 4573766 (1986-03-01), Bournay, Jr. et al.
patent: 4586039 (1986-04-01), Nonomura et al.
patent: 4677735 (1987-07-01), Malhi
patent: 4724433 (1988-02-01), Inoue et al.
patent: 4740782 (1988-04-01), Aoki et al.
patent: 4799057 (1989-01-01), Takeda et al.
patent: 4818981 (1989-04-01), Oki et al.
patent: 4823126 (1989-04-01), Nagata et al.
patent: 4838654 (1989-06-01), Hamaguchi et al.
patent: 4857907 (1989-08-01), Koden
patent: 4864890 (1989-09-01), McKechnie et al.
patent: 4881066 (1989-11-01), Kanno et al.
patent: 4883986 (1989-11-01), Egawa et al.
patent: 4922240 (1990-05-01), Duwaer
patent: 4931787 (1990-06-01), Shannon
patent: 4936656 (1990-06-01), Yamashita et al.
patent: 4980860 (1990-12-01), Houston et al.
patent: 5013939 (1991-05-01), Satoh
patent: 5073723 (1991-12-01), DaCosta
patent: 5095348 (1992-03-01), Houston
Tomihisa Sunata et al., "A 640.times.400 Pixel Active-Matrix LCD USING a-Si TFT's", Proceedings of the Society for Information Display (SID), 27 (1986) No. 3, New York, N.Y.
Young et al., "Avalanche Induce MOSFETs," IEE Transaction On Electronic Development, vol. 35, No. 4, Apr. 1988, pp. 426-431.
Malhi et al., "Novel SOICMOS," IEDM, pp. 107-110.
Colinge, Electronic Letts, 1986 vol. 22, No. 44, pp. 187-188.
W. Ehrenberg, "Electric Conduction in Semiconductors and Metals," 1958, pp. 25-27.
G. C. Gracey, "Overhead Electric Power LInes," 1963, pp. 27, 30-31.
Mozumi et al, "4.25 inch and 1.51 inch . . . LCD Video Displays Addressed by Poly-Si TFT's," SID 1984, Digest 316-319.
Malmberg et al., "Active Matrix LCD with Integrated Scanner Electronics," SID 1986 Digest, pp. 281-284.
Neudeck et al., "A CMOS-Like Amorphous Silicon Ambipolar Thin Film Transistor Invert Circuit," SID 1987 Digest pp. 151-154.
SID Symposium Digest Jun. 1984 pp. 312-319.
International Electron Devices Meeting, Dec. 9, 1987, pp. 448-451.
Misawa Toshiyuki
Oshima Hiroyuki
Jackson Jerome
Seiko Epson Corporation
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