Active matrix assembly

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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Details

257435, 257 59, 349 84, H01L 29786, H01L 27088

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active

056506376

ABSTRACT:
Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.

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patent: 4582395 (1986-04-01), Morozumi
Hayama et al., "Amorphous-silicon thin-film metal-oexide-semiconductor transistors," Appl. Phys. Lett. 36(9), May 1, 1980, pp. 754-755.
Hosokawa et al, "Dichroic Guest-Host Active Matrix Video Display," Biennial Display Research Conference, paper 11.6 (1980).
Kamins et al., "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Films," IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980, pp. 159-161.
Morozumi, "Active Matrix Addressed Liquid-Crystal Displays," 1985 International Display Research Conference, pp. 9-13.

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