Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-05-17
2008-12-16
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S024000, C438S048000, C257SE27001, C257SE21001
Reexamination Certificate
active
07465594
ABSTRACT:
An active-matrix addressing substrate improves the degradation of initial alignment of liquid-crystal molecules caused by the steps or level differences due to the pixel electrodes and/or the common electrode. The pixel electrodes are formed on or over the first insulating layer and the common electrode is formed on the second or third insulating layer. The second insulating layer has steps or level differences due to the pixel electrodes in their vicinities. The second insulating layer is made of a dielectric material having fluidity prior to hardening, e.g., an acrylic resin. The steps of the second insulating layer are relaxed, resulting in the gently sloping steps. The steps of an overlying alignment layer due to the common electrode slope gently as well. The thickness of the pixel electrodes, the thickness and inclination angle of the second insulating layer, and the thicknesses of the pixel and common electrodes are defined.
REFERENCES:
patent: 2003/0214027 (2003-11-01), Nishitani et al.
patent: 2002-323706 (2002-11-01), None
patent: 2004-62145 (2004-02-01), None
patent: 2004-302448 (2004-10-01), None
patent: 2005-195927 (2005-07-01), None
Lindsay, Jr. Walter
McGinn IP Law Group PLLC
Mustapha Abdulfattah
Nec LCD Technologies, Ltd.
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