Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2005-05-17
2005-05-17
Nguyen, Khanh V. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S054000, C330S295000
Reexamination Certificate
active
06894566
ABSTRACT:
The invention relates to a very wide band amplifier circuit including a distributed amplification cell (100) connected to a biasing cell (200), the amplification cell (100) including several transistors (T1) connected in parallel between a drain line and a grid line, each terminated at one of its ends by a load (Zin, Zout), the biasing cell (200) including at least one transistor (T2) connected between a power source (VDD) and the drain line of the amplification cell (100), said biasing cell having an overall impedance equal to the impedance of the load (Zout) connected to the end of the drain line of the amplification cell (100), characterized in that the grid (G2) of the transistor (T2) of the biasing cell (200) is connected to the node (201) of a divider bridge (R1R2, R1T3) so as to set its grid (G2) potential (VG2), and in that the grid (G2) and the source (S2) of said transistor (T2) are connected together by means of at least one capacitor (C1, C2).
REFERENCES:
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Versnaeyen C. et al., “Realisation De Macro Composants Hyperfrequences En Technologie Monolithique”, Revue De Physique Appliquee, Les Editions De Physique, vol. 23. No. 7, Jul. 1, 1998, pp. 1215-1218, figure 8 .
Boumard Benoît
Chelouah Abdenour
Claveau Regis
Soares Robert
Blakely & Sokoloff, Taylor & Zafman
Da-Lightcom
Nguyen Khanh V.
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