Active high-power RF switch and pulse compression system

Details Active high-power RF switch and pulse compression system Active high-power RF switch and pulse compression system

1997-05-01

1998-08-18

Gensler, Paul

Wave transmission lines and networks

Wave-shaping

327181, 327103, 333 81B, H01P 122, H01P 504

Patent

active

057963142

ABSTRACT:
A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

REFERENCES:
patent: 3812437 (1974-05-01), Marx
patent: 3949328 (1976-04-01), Levaillant
patent: 4115708 (1978-09-01), Liu
patent: 4864258 (1989-09-01), Garver et al
patent: 5099214 (1992-03-01), Rosen et al.

Affiliated with

Also associated with

Rating

Active high-power RF switch and pulse compression system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Active high-power RF switch and pulse compression system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active high-power RF switch and pulse compression system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1118273