Active high frequency semiconductor device with integral wavegui

Details Active high frequency semiconductor device with integral wavegui Active high frequency semiconductor device with integral wavegui

1980-01-21

1983-04-12

Larkins, William D.

Oscillators

Relaxation oscillators

331 96, 331107DP, 333247, 333250, H01L 2726

Patent

active

043800203

ABSTRACT:
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.

REFERENCES:
patent: 3903488 (1975-09-01), Fong
patent: 3909751 (1975-09-01), Tang et al.
patent: 3975690 (1976-08-01), Flemming
patent: 3986153 (1976-10-01), Kuno et al.
patent: 4301429 (1981-11-01), Goldman et al.

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