Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-06-26
2007-06-26
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S222000, C257S224000, C257S245000
Reexamination Certificate
active
09877050
ABSTRACT:
An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connected to the first gate region. The first gate region covers a first area, and the first contact covers a fraction of the first area. A pixel or register element includes an active gate, a second gate region of the first conductivity type formed in a corresponding second portion of the channel, and a second contact connected to the second gate region. The second gate region covers a second area and is spaced by a first gap from the first gate region. The second contact covers a fraction of the second area. The pixel or register element further includes a first gate electrode insulatively spaced from and disposed over the first gap.
REFERENCES:
patent: 3739240 (1973-06-01), Krambeck
patent: 3790825 (1974-02-01), Barron et al.
patent: 4151539 (1979-04-01), Barron et al.
patent: 4229752 (1980-10-01), Hynecek
patent: 4300151 (1981-11-01), Nishizawa
patent: 4612521 (1986-09-01), Kleefstra et al.
patent: 4725872 (1988-02-01), Blouke et al.
patent: 4779124 (1988-10-01), Hynecek
patent: 4814843 (1989-03-01), Nishizawa
patent: 5060245 (1991-10-01), Nelson
patent: 5151380 (1992-09-01), Hynecek
patent: 5235196 (1993-08-01), Anagnostopoulos et al.
patent: 5286990 (1994-02-01), Hynecek
patent: 5502318 (1996-03-01), Hynecek
patent: 5567641 (1996-10-01), Hynecek
patent: 5614740 (1997-03-01), Gardner et al.
patent: 5923370 (1999-07-01), Miethig et al.
Dalsa Inc.
Millen White Zelano & Branigan P.C.
Nadav Ori
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