Active element microwave phase shifter

Details Active element microwave phase shifter Active element microwave phase shifter

1984-09-14

1987-03-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307511, 307512, 307299R, 328155, 333104, H03H 721, H03K 500

Patent

active

046477896

ABSTRACT:
A continuously variable phase shifter for the phase range from 0.degree. to 90.degree., switchable phase shifters switchable between 0.degree. and 90.degree. and a continuously variable phase shifter for the phase shift range of 0.degree. to 360.degree. are disclosed. Each of the phase shifters relies on dual gate FET devices to provide the required phase shift in a compact structure while providing sufficient gain to avoid signal losses through the phase shifter. The transmission phase shift through a dual gate FET device is controlled by the DC bias on its second gate and by the type of reactive termination on that gate. A capacitive termination provides a transmission phase shift which is substantially independent of bias while an inductive termination provides a transmission phase shift which varies substantially linearly with bias voltage over a substantial range of bias voltage.

REFERENCES:
patent: 3634702 (1972-01-01), Drangeld
patent: 4153994 (1979-05-01), Ren
patent: 4232399 (1980-11-01), Heiter
patent: 4450372 (1984-05-01), Diamand
patent: 4511813 (1985-04-01), Pan
"Dual Gate GaAs MESFET Phase Shifter with Gain at 12 Mhz", Electronics Letters, Jul. 3, 1980, vol. 16, No. 14, pp. 553-554, by C. Tsifonis et al.
"Dual Gate FET Phase Shifter", RCA Review, vol. 42, No. 4, 10 Dec. 1981, pp. 596-616, by Mahesh Kumar.
"Performance of Dual-Gate GaAs MESFET's as Gained-Controlled Low-Noise Amplifiers and High-Speed Modulators", by C. A. Liechti, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-23, No. 6, Jun. 1975, pp. 461-469.

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