Active electronic device and electronic apparatus

Details Active electronic device and electronic apparatus Active electronic device and electronic apparatus

2006-08-08

2006-08-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Intervalley transfer

C257S024000, C257SE51040, C257SE47003

Reexamination Certificate

active

07087921

ABSTRACT:
To provide an active electronic device which is formed from a carbon nanotube and which excels in high frequency operation and an electronic apparatus using the active electronic device. Provided are the active electronic device including: a carbon nanotube (1); a first electrode (S) connected to one end of the carbon nanotube; a second electrode (D) connected to the other end of the carbon nanotube; and a third electrode (G) facing the carbon nanotube (1) to irradiate the carbon nanotube (1) with electromagnetic waves, in which the amount of current flowing into the carbon nanotube (1) is changed by electromagnetic waves, at least high frequency electromagnetic waves, radiated from the third electrode onto the carbon nanotube (1), and the electronic apparatus using the active electronic device.

REFERENCES:
patent: 2002/0024099 (2002-02-01), Watanabe et al.
patent: 2003/0098488 (2003-05-01), O'Keeffe et al.
S. J. Tans et al., “Room-temperature transistor based on a single carbon nanotube”, Nature, vol. 393, pp. 49-51, 1998.
A. Javey et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators”, Nano Letters, vol. 2, pp. 929-939, 2002.
P.G. Collins et al., “Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown”, vol. 292, pp. 706-709.

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