Active dynamic memory cell

Details Active dynamic memory cell Active dynamic memory cell

1989-06-13

1991-03-26

James, Andrew J.

357 234, 357 41, 357 46, 357 59, 357 51, 357 55, H01L 2968, H01L 2910, H01L 2702

Patent

active

050033611

ABSTRACT:
A dynamic memory cell comprises a storage transistor and an access transistor. The gate of the storage transistor is utilized as storage capacitor electrode, and is connected to its source by a high resistor. The drain of the storage is connected to a source of electrical potential (e.g., V.sub.CC). The access transistor connects the source of the storage transistor to a bit line. This arrangement multiplies the effective capacitance of the gate storage capacitor, reducing the area required and hence making the structure more compact than a typical inactive (one transistor) DRAM cell. In a preferred embodiment, the resistor is formed to overlie the storage transistor, and the drain of the storage transistor is connected to V.sub.CC by means of the sidewall of a trench formed in the semiconductor substrate.

REFERENCES:
patent: Re32090 (1986-03-01), Jaccodine et al.
patent: 4030083 (1977-06-01), Boll
patent: 4070653 (1978-01-01), Rao et al.
patent: 4139785 (1979-02-01), McElroy
patent: 4168536 (1979-09-01), Joshi et al.
patent: 4224635 (1980-09-01), Mauthe
patent: 4292677 (1981-09-01), Boll
patent: 4420871 (1983-12-01), Scheibe
patent: 4458259 (1984-07-01), Cogan
patent: 4466176 (1984-08-01), Temple
patent: 4641165 (1987-02-01), Iizuka et al.
patent: 4760432 (1988-07-01), Stoisick et al.

Affiliated with

Also associated with

Rating

Active dynamic memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Active dynamic memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active dynamic memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-620992