Active device having an oxide superconductor and a fabrication p

Details Active device having an oxide superconductor and a fabrication p Active device having an oxide superconductor and a fabrication p

1991-08-08

1993-07-27

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505702, 505703, 505729, 505732, 156600, 156603, H01B 1200, C35C 102

Patent

active

052310779

ABSTRACT:
A method for fabricating an active device comprises the steps of injecting particles into a single crystal substrate of a semiconductor material at a predetermined depth from the surface, annealing the substrate that contains the particles to form an insulator layer within the substrate, generally in correspondence to the predetermined depth, the step of annealing including a step of forming a single crystal semiconductor layer of a semiconductor material identical in composition with the substrate, on the insulator layer that is formed by the annealing, starting a deposition of a layer of an oxide superconductor on the semiconductor layer, growing the oxide superconductor layer while maintaining an epitaxial relationship with respect to the substrate; and converting the semiconductor layer to an oxide layer simultaneously to the growth of the oxide superconductor layer.

REFERENCES:
patent: 4970395 (1990-11-01), Kruse
patent: 5017551 (1991-05-01), Agostinelli et al.
patent: 5047390 (1991-09-01), Higashino et al.
Proceedings international Electron Devices Meeting; "Design and Performance of Subicron MOSFETs on Ultra-Thin SOI for Room Temperature and Cryogenic Operation"; Dec. 11, 1988, San Francisco, US pp. 294-295.
IBM Technical Disclosure Bulletin; "Fabrication of Buried Membrane for Superconducting Transistor Device"; vol. 30, No. 3, Aug. 1987, New York, US, pp. 1317-1318.
Journal of Material Research; "Superconductor-Substrate Interactions of the Y-Ba-Cu Oxide"; vol. 4, No. 1, Jan. 1989, London, UK pp. 1-15.

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