Active device constructed in opening formed in insulation layer

Details Active device constructed in opening formed in insulation layer Active device constructed in opening formed in insulation layer

1993-11-01

1995-02-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437915, H01L 21266

Patent

active

053915054

ABSTRACT:
A compact MOS type active device is constructed at least partially in an opening in an insulation layer, such as an oxide layer, above a portion of a semiconductor substrate forming a first source/drain region of the MOS type active device. A semiconductor material, on the sidewall of the opening, and in electrical communication with the portion of the substrate forming the first source/drain region of the device, comprises the channel portion of the MOS device. A second source/drain region, in communication with an opposite end of the channel, is formed on the insulation layer adjacent the opening and in electrical communication with the channel material in the opening. A gate oxide layer is formed over the channel portion and at least partially in the opening, and a conductive gate electrode is then formed above the gate oxide.

REFERENCES:
patent: 4960723 (1990-10-01), Davies
patent: 5250450 (1993-10-01), Lee et al.
patent: 5283201 (1994-02-01), Tsang et al.
patent: 5308778 (1994-05-01), Fitch et al.

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