Active cell isolation body of a semiconductor device and...

Details Active cell isolation body of a semiconductor device and... Active cell isolation body of a semiconductor device and...

2007-06-12

2007-06-12

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S421000, C438S422000, C438S423000, C257SE21546

Reexamination Certificate

active

11025011

ABSTRACT:
An active cell isolation body of a semiconductor device and a method for forming the same are disclosed. An example active cell isolation body of a semiconductor device includes a trench with a depth in a semiconductor substrate at an active cell isolation region, a buried gap in the semiconductor substrate at a lower portion of the active cell isolation region, where the buried gap is in communication with the trench and extended toward active regions of the semiconductor substrate, and an active cell isolation film filled in the trench to close the buried gap.

REFERENCES:
patent: 4925805 (1990-05-01), van Ommen et al.
patent: 6245636 (2001-06-01), Maszara
Wolf et al., “Silicon Processing for the VLSI Era” vol. 1: Process Technology, Lattice Press 1986, pp. 242, 307-308.

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