Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Patent
1994-05-16
1995-09-19
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
330289, 330295, H03F 130, H03F 368
Patent
active
054519071
ABSTRACT:
A high-power radio-frequency amplifier act on periodic pulses of RF energy. The bias is controlled for each of a bank of FETs or other amplifier devices that constitutes the main power stage. A sample of bias current is obtained during a blanking period on the front porch of the RF gating period. Quiescent drain current is measured, and stored on a sample/hold circuit. A digital signal processor provides bias values that are sent via a D/A converter to biasing circuits that add the bias levels to the input RF signal. If the bias current is above or below a desired level, the stored bias level is decreased or incremented respectively. A timing control circuit gates the sample/hold circuit and switches in advance of the biasing circuits. The timing control circuit also creates a blanking signal to apply to an attenuator to produce a null region during the first 100 microseconds of the gating signal. A thermal sensor is coupled to one or more amplifying devices for presetting the operating voltage when operation has been interrupted for a predetermined period of time.
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Keane Anthony R. A.
Vandebroek Bart C.
ENI Div. of Astec America, Inc.
Mottola Steven
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