Fishing – trapping – and vermin destroying
Patent
1986-05-27
1989-07-18
Morgenstern, Norman
Fishing, trapping, and vermin destroying
437235, 437245, H01L 21283
Patent
active
048493775
ABSTRACT:
Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.
REFERENCES:
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patent: 4471004 (1984-09-01), Kim
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4597167 (1986-07-01), Moriya
patent: 4653428 (1987-03-01), Wilson et al.
Okabayashi et al, "A Mo-Nitride/Mo Gate MOS Structure", Extended Abstracts of Battery Division, The Electrochemical Society, Inc., Spring Meeting, Minneapolis, Minnesota, May 10-15, 1901, Abstract No. 302, pp. 753-755.
M. J. Kim et al., "Molybdenum Nitride Film Formation", Reprinted from Journal of the Electrochemical Society, vol. 30, No. 5, May 1983, pp. 1196-1200.
Pauleau, Y. et al., "Kinetics and Mechanism of Selective Tungsten Deposition by LPCVD", Journal of the Electrochemical Society, vol. 132, p. 2779 (1985).
Griffing Bruce F.
Kim Manjin J.
Stoll Robert W.
Williams Arlene G.
Wilson Ronald H.
General Electric Company
Morgenstern Norman
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