Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2007-05-29
2007-05-29
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S780000, C257S786000, C438S612000, C438S614000
Reexamination Certificate
active
11305987
ABSTRACT:
An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.
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T. B. Ching et al., “Bond Pad Structure Reliability”, Texas Instruments Incorporated, 1998 IEEE, pp. 64-70.
Bakeman, Jr. Paul E
Church Michael D
Decrosta David A
Gasner John T
Lomenic Robert
Fogg & Powers LLC
Intersil America's Inc.
Lee Hsien-Ming
Lundberg Scott V.
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