Active area bonding compatible high current structures

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S780000, C257S786000, C438S612000, C438S614000

Reexamination Certificate

active

11305987

ABSTRACT:
An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

REFERENCES:
patent: 4695868 (1987-09-01), Fisher
patent: 6100589 (2000-08-01), Tanaka
patent: 6133054 (2000-10-01), Henson
patent: 6198170 (2001-03-01), Zhao
patent: 2001/0000928 (2001-05-01), Lee et al.
patent: 2002/0011674 (2002-01-01), Efland et al.
patent: 2002/0179991 (2002-12-01), Vamol et al.
patent: 2003/0045066 (2003-03-01), Imal et al.
W. R. Anderson et al, “ESD Protection Under Wire Bonding Pads”, EOS/ESD Symposium, 1999, pp. 2A4.1-2A4.7.
W. R. Anderson et al., “Reliability considerations for ESD protection under wire bonding pads”, Microelectronics Reliability 41 (2001) pp. 367-373.
T. B. Ching et al., “Bond Pad Structure Reliability”, Texas Instruments Incorporated, 1998 IEEE, pp. 64-70.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Active area bonding compatible high current structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Active area bonding compatible high current structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Active area bonding compatible high current structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3724357

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.