Activation of carbon nanotubes for field emission applications

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S099000, C977S855000, C977S857000, C977S858000, C977S859000, C977S888000

Reexamination Certificate

active

07462498

ABSTRACT:
Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material.

REFERENCES:
patent: 5726524 (1998-03-01), Debe
patent: 5981305 (1999-11-01), Hattori
patent: 6057636 (2000-05-01), Sakai et al.
patent: 6057637 (2000-05-01), Zettl et al.
patent: 6097138 (2000-08-01), Nakamoto
patent: 6239547 (2001-05-01), Uemura et al.
patent: 6286226 (2001-09-01), Jin
patent: 6436221 (2002-08-01), Chang et al.
patent: 6713947 (2004-03-01), Hirasawa et al.
patent: 6766566 (2004-07-01), Cheng et al.
patent: 7040948 (2006-05-01), Mao et al.
patent: 7105200 (2006-09-01), Sakamoto et al.
patent: 7125308 (2006-10-01), Fink
patent: 7132161 (2006-11-01), Knowles et al.
patent: 2003/0092207 (2003-05-01), Yaniv et al.
patent: 2004/0104660 (2004-06-01), Okamoto et al.
patent: 2004/0166235 (2004-08-01), Fujii et al.
patent: 2004/0191698 (2004-09-01), Yagi et al.
patent: 2004/0206448 (2004-10-01), Dubrow
patent: 2004/0224081 (2004-11-01), Sheu et al.
patent: 2005/0062024 (2005-03-01), Bessette et al.
patent: 2006/0188721 (2006-08-01), Irvin et al.
patent: WO 01/92150 (2001-06-01), None
Yang-Doo Lee et al., “53.2: Characteristics of Field Emission from Printed Carbon Nanotubes by Physical Surface Treatments,”SID 05 Digest, 2005, pp. 1617-1619.
Jihua Zhang et al., “Enhancement of field emission from hydrogen plasma processed carbon nanotubes,”Diamond and Related Materials, 13 (2004), pp. 54-59.
D.S. Chung et al., “Field emission from 4.5 in. single-walled and multiwalled carbon nanotube films,”J. Vac. Sci. Technol. B, vol. 18, No. 2, Mar./Apr. 2000, pp. 1054-1058.
T.J. Vink et al., “Enhanced field emission from printed carbon nanotubes by mechanical surface modification,”Appl. Phys. Lett., vol. 83, No. 17, Oct. 27, 2003, pp. 3552-3554.
W.J. Zhan et al., “Field emission from screen-printed carbon nanotubes irradiated by tunable ultraviolet laser in different atmospheres,”J. Vac. Sci. Technol. B, vol. 21, No. 4, Jul./Aug. 2003, pp. 1734-1737.
Z.F. Ren et al., “Synthesis of Large Arrays of Well-Aligned Carbon Nanotubes on Glass,”Science, vol. 282, Nov. 6, 1998, pp. 1105-1107.
Won Seok Kim et al., “Secondary electron emission from magnesium oxide on multiwalled carbon nanotubes,”Appl. Phys. Lett., vol. 81, No. 6, Aug. 5, 2002, pp. 1098-1100.
Walt A. de Heer, “Nanotubes and the Pursuit of Applications,”MRS Bulletin, Apr. 2004, pp. 281-285.
Jihua Zhang, “Enhancement of field emission from hydrogen plasma processed carbon nanotubes,” ScienceDirect-Diamond and Related Materials, vol. 13, Issue 1, Jan. 2004, Abstract, pp. 1-2 (printed from Internet at http://www.sciencedirect.com/science).
D.S. Mao et al., New CNT composites for FEDs that do not require activation, 9th International Display Workshops, Dec. 2002, Hiroshima, Japan, pp. 1-2.
Zvi Yaniv, “The Status of the Carbon Electron Emitting films for Display and Microelectronic Applications,” International Display Manufacturing Conference, Jan. 2002, Seoul, Korea, pp. 1-6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Activation of carbon nanotubes for field emission applications does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Activation of carbon nanotubes for field emission applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Activation of carbon nanotubes for field emission applications will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4024916

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.