Actinic alignment to CEM coated resist films

Details Actinic alignment to CEM coated resist films Actinic alignment to CEM coated resist films

1989-07-05

1990-12-11

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430311, 430327, G03F 900

Patent

active

049770489

ABSTRACT:
A method of actinic aligning semiconductor wafers which are coated with a contrast enhancement material is provided, wherein an alignment target formed on a semiconductor substrate which is coated with photoresist and contrast enhancement material is exposed to actinic wavelength light, while protecting active device areas from exposure. The contrast enhancement material over the alignment target is thus bleached so that the underlying alignment target becomes visible to actinic wavelength light. A pattern comprising an alignment pattern and an active device pattern is projected onto the wafer. The now visible alignment target is aligned to the projected alignment pattern with sub-exposure energy actinic light using conventional techniques and an actinic alignment tool, and the active device pattern subsequently exposed at an exposure energy of the actinic wavelength once the alignment is completed.

REFERENCES:
Chao et al., "Self-Developing Resists for Direct-View Alignment", IBM Tech. Disc. Bull., vol. 26(11), 1984, pp. 5954-5955.

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