Acoustic wave device and high-frequency filter using the same

Details Acoustic wave device and high-frequency filter using the same Acoustic wave device and high-frequency filter using the same

2011-08-09

2011-08-09

Takaoka, Dean O (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S193000, C333S154000

Reexamination Certificate

active

07994878

ABSTRACT:
Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1and an aluminum nitride film6with a thickness h2are formed on that comb electrode and reflector, wherein:in-line-formulae description="In-line Formulae" end="lead"?2.5≦hr/λ≦8.5% is obtained.in-line-formulae description="In-line Formulae" end="tail"?

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James J. Campbell et al, “A Method for Estimating Optimal Crystal Cuts and Propagation Directions for Excitation of Piezoelectric Surface Waves”, IEEE Transactions on Sonics and Ultrasonics, vol. SU-15, No. 4, pp. 209-217, Oct. 1968.

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