Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices
Patent
1984-07-18
1985-12-03
Budd, Mark O.
Electrical generator or motor structure
Non-dynamoelectric
Piezoelectric elements and devices
310320, 310311, H01L 4108
Patent
active
045568120
ABSTRACT:
A method of fabricating an acoustic wave resonator wherein all processing steps are accomplished from a single side of said substrate. The method involves deposition of a multi-layered Al/AlN structure on a GaAs substrate followed by a series of fabrication steps to define a resonator from said composite. The resulting resonator comprises an AlN layer between two Al layers and another layer of AlN on an exterior of one of said Al layers.
REFERENCES:
patent: 3486046 (1969-12-01), Zalar
patent: 3568108 (1971-03-01), Poirier et al.
patent: 4189516 (1980-02-01), Dryburgh et al.
patent: 4214018 (1980-07-01), Halon et al.
patent: 4302408 (1981-11-01), Ichihara
patent: 4345176 (1982-08-01), Grudkowski
patent: 4456850 (1984-06-01), Inoue et al.
patent: 4480488 (1984-11-01), Read et al.
Aluminum Nitride Thin Film and Composite Bulk Wave Resonators, Lakin et al., 36th Ann. Freq. Control Symposium, 1982.
Selective Etching of GaAs Crystals in H.sub.2 SO.sub.4 --H.sub.2 O.sub.2 --H.sub.2 O Systems, Iida et al., Electrochem. Society, #118, p. 768, May 1971.
Localized GaAs Etching with Acidic Hydrogen Peroxide Solutions, by Shaw, J. Electrochem. Society, #128, p. 874, Apr. 1981.
Low-Temperature Coefficient Bulk Acoustic Wave Composite Resonators, Wang et al., Appl. Phys. Lett., #40(4), p. 308, Feb. 15, 1982.
ZnO/SiO.sub.2 Diaphragm Composite Resonator on a Silicon Wafer, Nokamura et al., Elect. Lett., #17 (14), p. 507, Jul. 9, 1981.
Cadmium Sulphide and Zinc Oxide Thin-Film Transducers, Foster et al., IEEE Trans. on Sonics and Ultrasonics, vol. 15, No. 1, p. 28, Jan. 1968.
Springer et al., J. Vac. Sci. Technol., #20, 1981, p. 507.
Kline Gerald R.
Lakin Kenneth M.
Budd Mark O.
Hightower Judson R.
Rees Walter L.
The United States of America as represented by the United States
Weinberger James W.
LandOfFree
Acoustic resonator with Al electrodes on an AlN layer and using does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Acoustic resonator with Al electrodes on an AlN layer and using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Acoustic resonator with Al electrodes on an AlN layer and using will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1396360