Wave transmission lines and networks – Coupling networks – Electromechanical filter
Reexamination Certificate
2008-05-13
2008-05-13
Takaoka, Dean (Department: 2817)
Wave transmission lines and networks
Coupling networks
Electromechanical filter
C333S188000
Reexamination Certificate
active
11024165
ABSTRACT:
A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode, where the first overlap is defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode. The FBAR device also includes a first dielectric layer in between the piezoelectric layer and the bottom electrode and a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device.
REFERENCES:
patent: 5166646 (1992-11-01), Avanic et al.
patent: 5339051 (1994-08-01), Koehler et al.
patent: 5617065 (1997-04-01), Dydyk
patent: 5747857 (1998-05-01), Eda et al.
patent: 6204737 (2001-03-01), Ella
patent: 6236281 (2001-05-01), Nguyen et al.
patent: 6473289 (2002-10-01), Weisse et al.
patent: 6741147 (2004-05-01), Harris
patent: 6788170 (2004-09-01), Kaitila et al.
patent: 6809604 (2004-10-01), Kawakubo et al.
patent: 6943484 (2005-09-01), Clark et al.
patent: 7002437 (2006-02-01), Takeuchi et al.
patent: 2005/0034822 (2005-02-01), Kim et al.
patent: 10153434 (2003-05-01), None
patent: 0631384 (1994-12-01), None
patent: 980252 (1982-12-01), None
Krishnaswamy et al., “Film Bulk Acoustic Wave Resonator Technology”, IEEE Ultrasonics Symposium, pp. 529-536 (1990).
Lutsky et al., “A Sealed Cavity TFR Process for RF Bandpass Filters”, IEEE IEDM 1995, pp. 95-98 (1996).
K.M. Lakin, “Thin Film Resonators and Filters”, IEEE Ultrasonics Symposium, pp. 895-906 (1999).
Ballato,Modeling Piezoelectric and Piezomagneic Devices and Structures via Equivalent Networks,IEEE Transactions on Ultrasonics, vol. 48, No. 5 pp. 1189-1240 (Sep. 2001).
Ylilammi et al., “Thin Film Bulk Acoustic Wave Filter”, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 49, No. 4 pp. 535-539 (Apr. 2002).
Lanz et al., “Surface Micromachined BAW Resonators Based on ALN” IEEE Ultrasonics Symposium, pp. 981-983 (2002).
Khanna et al., “A 2GHz Voltage Tunable FBAR Oscillator”, IEEE MTT-S Digest, pp. 717-720 (2003).
Hara et al., “Aluminum Nitride Based Thin Film Bulk Acoustic Resonator Using Germanium Sacrificial Layer Etching”, IEEE Transducers '03 The 12thInternational Conference on Solid State Sensors, Actuators and Microsystems, pp. 1780-1783 (Jun. 8, 2003).
European Search Report for EP 03 44 7311, application of Interuniversitair Microelektronica Centrum, dated Jun. 2, 2004.
European Search Report for EP 04 07 8526, application of Interuniversitair Microelektronica Centrum, dated May 6, 2005.
Pan Wanling
Tilmans Hendrikus A. C.
Interuniversitair Microelektronica Centrum (IMEC)
McDonnell Boehnen & Hulbert & Berghoff LLP
Takaoka Dean
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