Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-06-07
1997-05-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257201, 257184, 257458, 359248, H01L 29205, H01L 310304, H01L 31105
Patent
active
056314728
ABSTRACT:
An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I.sup.+ and a minimum intensity I.sup.- is determined over a predetermined number of waveform cycles. The intensity drop .DELTA.I from initial reflectivity to minimum reflectivity of the waveform cycles is determined and normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: ##EQU1## The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize matching. A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 .mu.m. The modulator is characterized by a lattice mismatch of less than 2.times.10.sup.4.
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Cunningham John E.
Goossen Keith W.
Pathak Rajiv N.
Jackson Jerome
Lucent Technologies - Inc.
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