Accurate in-situ lattice matching by reflection high energy elec

Details Accurate in-situ lattice matching by reflection high energy elec Accurate in-situ lattice matching by reflection high energy elec

1994-06-21

1996-01-02

Fourson, George

Fishing, trapping, and vermin destroying

437105, 437107, 437133, 117 86, H01L 21205

Patent

active

054808138

ABSTRACT:
An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I.sup.+ and a minimum intensity I.sup.- is determined over a predetermined number of waveform cycles. The intensity drop .DELTA.I from initial reflectivity to minimum reflectivity of the waveform cycles is determined and a normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: ##EQU1## The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize lattice matching. A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 .mu.m. The modulator is characterized by a lattice mismatch of less than 2.times.10.sup.-4.

REFERENCES:
patent: 3751310 (1973-08-01), Cho
patent: 4818079 (1989-04-01), Maserjian
patent: 4904045 (1990-02-01), Alferness et al.
patent: 5094974 (1992-03-01), Grunthaner et al.
patent: 5122222 (1992-06-01), Turner et al.
patent: 5148025 (1992-09-01), Ahn et al.
patent: 5185289 (1993-02-01), Meier et al.
patent: 5200201 (1993-04-01), Kawai et al.
patent: 5238525 (1993-08-01), Turner et al.
patent: 5251225 (1993-10-01), Eglash et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5258326 (1993-11-01), Morishima et al.
patent: 5272356 (1993-12-01), Wen et al.
Observation of Coherent Rayleigh Noise in Single-Source Bidirectional Optical Fiber Systems, Wood et al., Journal of Lightwave Technology, vol. 6, No. 2, Feb. 1, 1988, pp. 346-351.
Dynamics of Film Growth of GaAs by MBE from Rheed Observations, Neave et al., Applied Physics A, Springer-Verlag, Feb. 1983, pp. 1-8.
"Damped Oscillation in Reflection High Energy Electron Diffraction During GaAs MBE", Hove et al., Department of Electrical Engineering, University of Minnesota, J. Vac. Sci. Technol. B vol. 1, No. 2, Jul.-Sep. 1983, pp. 741-746.
Frequency-Domain Analysis of Time-Dependent Reflection High-Energy Electron Diffraction Intensity Data, Turner et al., Lincoln Laboratory, Massachusetts Institute of Technology, Dec. 1989 J. Vac. Sci. Technol. B, vol. 8, No. 2, Mar.-Apr. 1990, pp. 283-287.
Is the Cation Sticking Coefficient Unity in Molecular Beam Epitaxy At Low Temperature, Chiu et al., AT&T Bell Laboratories, N.J., Amer. Institute of Physics, Appl. Phys. Lett., vol. 57, No. 14, Oct. 1, 1990, pp. 1425-1427.
Growth Rate and Composition Calibration of III/V Materials on GaAs and InP Using Reflection High-Energy Electron Diffraction Oscillations, Kopf et al., AT&T Bell Labs, N.J., J. Vac. Sci. Technol. B, vol. 9 No. 4 Jul./Aug. 1991, pp. 1920-1923.
Optically Monitoring and Controlling Epitaxial Growth, Aspnes et al., Journal of Crystal Growth, 120, 71-77, North-Holland, 1992.
In-Situ Control of Ga(A1) As MBE Layers By Pyrometric Interferometry, Grothe et al., Journal of Crystal Growth, 127, 1010-1013, North-Holland, 1993.
InGaAs/InP P-I (MQW)-N Surface Normal Electroabsorption Modulators Exhibiting Better than 8:1 Contrast Ratio for 1.55 .mu.m Applications Grown by Gas Source MBE, Pathak et al., AT&T Bell Laboratories, N.J. (date unknown).

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