Accurate control during vapor phase epitaxy

Details Accurate control during vapor phase epitaxy Accurate control during vapor phase epitaxy

1974-09-30

1976-01-06

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

118 48, 118 495, 148174, 156610, 156613, H01L 2120, H01L 21205

Patent

active

039309088

ABSTRACT:
A small quantity or low flow rate of a gaseous component is accurately and quickly introduced into the reaction chamber during the process of vapor phase epitaxy. The gaseous component is selectively communicated directly into a primary gaseous flow which passes into the reaction chamber. By maintaining a continuous flow of the gaseous component, the gaseous component can be accurately introduced into the reaction chamber without initially entering the reaction chamber with a large surge of concentration.

REFERENCES:
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patent: 3366516 (1968-01-01), McAleer et al.
patent: 3413145 (1968-11-01), Robinson et al.
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patent: 3522118 (1970-07-01), Taylor et al.
patent: 3721583 (1973-03-01), Blakeslee
blakeslee, A. E., "Vapor Growth of a Semiconductor Superlattice", J. Electrochem. Soc., Solid State Science, Vol. 118, No. 9, Sept. 1971, pp. 1459-1463.

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