Accumulation mode charge injection infrared sensor

Details Accumulation mode charge injection infrared sensor Accumulation mode charge injection infrared sensor

1976-02-02

1977-01-18

Dixon, Harold A.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

250338, 250349, 357 30, G01J 100, G01T 122

Patent

active

040041484

ABSTRACT:
The present invention relates to an accumulation mode charge injection device utilizing the extrinsic photoconductivity of a doped semiconductor material to sense infrared radiation. The device is operated at cryostatic temperatures to preclude thermal ionization of the impurity sites and majority carriers are produced by IR photons interacting with these sites. The device utilizes a metal-oxide-semiconductor structure to accumulate the IR photon induced majority carriers at the semiconductor oxide interface under a first bias condition. When the bias is reversed the accumulated charges are injected into an output electrode. The sensor may be used singly or in arrays of similar sensors.

REFERENCES:
patent: 3786263 (1974-01-01), Michon
patent: 3864722 (1975-02-01), Carnes
patent: 3873836 (1975-03-01), Greene
patent: 3882531 (1975-05-01), Michon
patent: 3902066 (1975-08-01), Roosild

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