Electrical pulse counters – pulse dividers – or shift registers: c – Counting or dividing in incremental steps – Beam type tube
Patent
1984-04-25
1985-03-05
Munson, Gene M.
Electrical pulse counters, pulse dividers, or shift registers: c
Counting or dividing in incremental steps
Beam type tube
357 30, 377 60, 377 63, 250370, H01L 2978, H01L 2714, H01L 3100, G11C 1928
Patent
active
045034508
ABSTRACT:
An accumulation-mode bulk channel CCD converts an electromagnetic radiation pattern into electrical signals. The device body may be of monocrystalline silicon and has a radiation-sensitive region which is of a first conductivity type determined by a dopant (e.g. sulphur, platinum, indium or thallium) having an energy level or levels sufficiently deep in the semiconductor band gap that substantially all of said dopant atoms are un-ionized at the device operating temperature. By this means the region is substantially free of majority charge carriers in the absence of radiation, and majority charge carriers trapped by the dopant atoms can be released upon excitation by the radiation. A first ohmic contact to the region supplies majority charge carriers to the dopant to replace charge carriers released by the incident radiation. An electrode system on a first major side of the region permits electric fields to be capacitively generated in the region for accumulating the released majority carriers below the electrode system as charge packets corresponding to the incident radiation pattern and for transporting these charge packets laterally across the region to an output from the region. The device is converted from a surface-channel to a bulk-channel CCD by the addition of a surface layer of the first conductivity type at the first major side of said region below the electrode system. The surface layer is separated from the first contact by the region and comprises a conductivity-type determining dopant (e.g. arsenic) having an energy level or levels sufficiently shallow in the semiconductor band gap such that at the operating temperature atoms of this shallow-level dopant are ionized. An ohmic contact which may also serve as the output is electrically connected to the surface layer for extracting the majority charge carriers generated by the shallow-level dopant and thereby forming in the surface layer a space-charge zone which forms in the body a potential minimum spaced from the surface.
REFERENCES:
patent: 4004148 (1977-01-01), Howard et al.
patent: 4210922 (1980-07-01), Shannon
patent: 4264915 (1981-04-01), Bierhenke et al.
patent: 4285000 (1981-08-01), Deyhimy et al.
Nelson "Accumulation-Mode Charge-Coupled Device" Applied Physics Letters, vol. 25 (11/74) pp. 568-570.
Biren Steven R.
Mayer Robert T.
Munson Gene M.
U.S. Philips Corporation
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