Accessing phase change memories

Details Accessing phase change memories Accessing phase change memories

2006-01-24

2006-01-24

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S063000, C365S185070, C365S185240, C257S042000

Reexamination Certificate

active

06990017

ABSTRACT:
A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one embodiment, the first selection device may have a threshold voltage substantially equal to its holding voltage. In some embodiments, the selection devices and the memory element may be made of chalcogenide. In some embodiments, the selection devices may be made of non-programmable chalcogenide. The selection device with the higher threshold voltage may contribute lower leakage to the combination, but may also exhibit increased snapback. This increased snapback may be counteracted by the selection device with the lower threshold voltage, resulting in a combination with low leakage and high performance in some embodiments.

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Van Landingham, “Circuit Applications of Ovonic Switching Devices”, IEEE Transactions on Electron Devices, vol. ED-20, No. 2, Feb. 1973.

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