Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-08-09
2009-08-25
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C365S163000
Reexamination Certificate
active
07579615
ABSTRACT:
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
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patent
Brooks Joseph F.
Campbell Kristy A.
Daley Jon
Dickstein & Shapiro LLP
Lulis Michael
Micro)n Technology, Inc.
Phung Anh
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