Accelerometers using silicon on insulator technology

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

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257417, 257418, 257420, 7351421, 7351422, 7351423, 73DIG1, 73DIG4, H01L 2982

Patent

active

057808856

ABSTRACT:
Process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring device; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.

REFERENCES:
patent: 5006487 (1991-04-01), Stokes
patent: 5381300 (1995-01-01), Thomas et al.
patent: 5500549 (1996-03-01), Takeuchi et al.
patent: 5572057 (1996-11-01), Yamamoto et al.
Rudolf et al, "Precision Accelerometers with Mg Resolution", Sensors and Actuators, A21-A23, 1990, pp. 297-302.
Harendt et al, "Wafer Bonding and its Application to Silicon-on-Insulator Fabrication," Technical Digest HHE '90, 2nd Workshop, Berlin, 1990, pp. 1-6.

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