Accelerator for ion implantation

Details Accelerator for ion implantation Accelerator for ion implantation

1985-05-17

1987-05-19

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

328233, 3133601, H01J 2300, H01J 3700

Patent

active

046671110

ABSTRACT:
A radio frequency (rf) ion accelerator. A beam of ions enters the accelerator with a low initial velocity. Ions are accelerated to energies on the order of 1 mev per charge state for use in deep ion implantation of semiconductor materials. The accelerator is constructed from multiple stages or cells with each cell including an accelerating electrode coupled to an rf resonant tank circuit. The phase of the tank circuit oscillation is controlled to take into account the mass, charge, and initial velocity of the ion. After traversing the multiple cells, a focused beam of ions is directed to a workpiece.

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N. J. Barrett, Proc. Fourth Int. Con. on Ion Implantation: Equipment and Tech. eds. H. Ryssel & H. Glawischnig, Springer-Verlag, Berlin.
I Ben-Zvi, "Superconducting Linacs Used with Tandems" Nuc. Inst. & Methods in Physics Research 220 (1984) 177.
T. P. Wangler & R. H. Stokes "The Radio-Frequence Quadrupole Linear Accelerator" IEEE Trans. Nuc. Sci. NS-28, No. 2, 1981.

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