Acceleration sensor

Measuring and testing – Speed – velocity – or acceleration – Acceleration determination utilizing inertial element

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Details

7351401, 7351423, 7351435, G01P 1508

Patent

active

055114210

ABSTRACT:
An acceleration detecting method and an acceleration sensor are disclosed. An inverted potential distribution structure of a metal-insulator-semiconductor type is formed on a semiconductor substrate. The deflection of the weight fixed above the semiconductor substrate with a predetermined space therebetween is detected by the output of the inverted potential distribution structure of a metal-insulator-semiconductor type. The inverted potential distribution structure of a metal-insulator-semiconductor type is turned on when the weight or the electrode on the surface thereof comes close to or comes into contact with the insulation film or the electrode on the semiconductor substrate. The capacitance of the inverted potential distribution structure of a metal-insulator-semiconductor type changes with the deflection of the weight.

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Frank Goodenbough, "Mass Production of Acceleration Sensor IC for Automobile Air Bag for Surface Micro-Machining Technology", Nikkei Electronics, No. 540, pp. 223-231 (with English Abstract) Nov. 11, 1991, (first publication: Electronic Design (1991), Penton Publishing, Inc.).

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