Acceleration detecting apparatus formed by semiconductor

Measuring and testing – Speed – velocity – or acceleration – Acceleration determination utilizing inertial element

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73651, 338 46, G01P 1512

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active

048919845

ABSTRACT:
First to third frames are formed by etching to penetrate a silicon substrate on the substrate. A plurality of thin cantilevered beams are formed in different lengths by cutting by etching the substrate in the frames; the beams formed in the first frame are formed perpendicular to the surface of the substrate to bend only in the X-axis direction, parallel to the surface of the substrate; the beams formed in the second frame are formed perpendicular to the surface of the substrate to bend only in the Y-axis direction, parallel to the surface of the substrate; and the beams formed in the third frame are formed to bend only in the Z-axis direction, perpendicular to the surface of the substrate. Masses are formed at the free ends of the beams, and piezo resistance layers are formed at the fixed ends. Signals generated from the piezo resistance layers by an integrated circuit are supplied to the regions, different from the regions formed of the first to third frames, of the substrate to form a signal processor for generating acceleration detection signals.

REFERENCES:
patent: 3304787 (1967-02-01), Chiku et al.
patent: 4342227 (1982-08-01), Petersen et al.
patent: 4507705 (1985-08-01), Hoshino et al.
patent: 4653326 (1987-03-01), Danel et al.
L. M. Roylance et al., "A Batch--Fabricated Silicon Accelerometer", IEEE Transactions on Electron Devices, vol. ED--26, No. 12, (Dec. 1979), pp. 1911-1917.

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