Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-17
2011-05-17
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S463000, C257SE31032, C438S048000
Reexamination Certificate
active
07944012
ABSTRACT:
An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region (15) beneath the p+ well (12) which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well (13). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.
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Prydderch Mark Lyndon
Turchetta Renato Andrea Danilo
Villani Giulio Enrico
Birch & Stewart Kolasch & Birch, LLP
Fahmy Wael
Salerno Sarah K
The Science and Technology Facilities Council
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