AC silicon PN junction photodiode light-valve substrate

Details AC silicon PN junction photodiode light-valve substrate AC silicon PN junction photodiode light-valve substrate

1977-12-28

1980-03-04

Bauer, Edward S.

350334, 357 24, 357 30, G02P 113

Patent

active

041914520

ABSTRACT:
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a PIN photodiode structure. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response an capable of operating over a wide frequency range. A PIN photodiode structure is provided on one side of the substrate next to the MOS capacitor to deplete the substrate of its mobile charge carriers during a portion of the AC cycle and to collect the electric field-guided signal representing charge carriers that are generated or introduced into the substrate by an input mechanism. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.

REFERENCES:
patent: 3976361 (1976-08-01), Fraas et al.
patent: 4032954 (1977-06-01), Grinberg et al.
patent: 4093357 (1978-06-01), Jacobson et al.

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