AC drain voltage charging source for PROM devices

Details AC drain voltage charging source for PROM devices AC drain voltage charging source for PROM devices

1993-06-23

1994-08-16

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

365 45, 36518909, G11C 1140

Patent

active

053392701

ABSTRACT:
A method for programming a programmable read only memory (PROM) is useful for a PROM which has a source, a drain and a control gate. A DC signal is placed on the control gate. For example, the DC signal has a voltage of approximately 5 volts. An AC signal is placed on the drain. The AC signal, for example, oscillates between approximately 0 volts and 5 volts and has a frequency of at least 100 Megahertz. As a result, charges tunnel through a tunnel oxide region to an floating gate, thus programming the PROM.

REFERENCES:
patent: 4057788 (1977-11-01), Sage
patent: 4279024 (1981-07-01), Schrenk
patent: 4449205 (1984-05-01), Hoffman
patent: 5239500 (1993-08-01), Oguey
E. Sackingeret al., "An Analog Trimming Circuit Based on a Floating-Gate Device," IEEE Journal of Solid-State Circuits, vol. 23 #6, Dec. 1988, pp. 1437-1440.
Y. Yamauchi, et al, "A 5V-Only Virtual Ground Flash with An Auxiliary Gate for High Density and High Speed Application", IEDM Dec. 1991, p. 11.7.1.
N. Kodama, et al., "A Symmetrical Side Wall(SSW)-DSA Cell for a 64Mbit Flash Memory", IEDM, Dec. 1991, p. 11.3.1.

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