Absorption optimized laser annealing

Details Absorption optimized laser annealing Absorption optimized laser annealing

1982-11-18

1984-09-18

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

219121LE, 219121LF, B05D 306

Patent

active

044724560

ABSTRACT:
A method for selectively heating an insulating layer on a semiconductor structure by a high energy transient radiation source to a temperature sufficient to cause reflow without any significant heating of the regions adjacent to or underlying the insulating layer. In one embodiment a laser tuned to the absorption wavelength of the insulating material is scanned over the surface of the semiconductor structure. In another embodiment an insulating layer and an underlying or adjacent semiconductor layer are concurrently heated by a laser tuned to an absorption wavelength common to both in order to maintain the integrity of the interface therebetween. In a further embodiment the depth of heating in an insulating layer is controlled by selecting an appropriate dwell time for a continuous wave laser and a pulse duration for a pulsed laser.

REFERENCES:
patent: 4097889 (1978-06-01), Kern et al.
patent: 4249960 (1981-02-01), Schnable et al.
patent: 4258078 (1981-03-01), Celler et al.
patent: 4284659 (1981-08-01), Jaccodine et al.
M. Delfino et al., "Laser Activated Flow of Phosphosilicate Glass in Integrated Circuit Devices", IEEE Electron Device Letters, vol. EDL3, No. 5, May 1982, pp. 116-118.
P. Jeuch et al., "P-Glass Reflow with a Tunable CO.sub.2 Laser", Article in Laser and Electron-Beam Interaction with Solids, ed. by B. R. Appleton et al., Elseview Science Pub. Co., Inc. 1982, pp. 603-608, Also presented at the Materials Research Society Meeting, Boston, MA, Nov. 16-21, 1981.

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