Absorbing layers for reduced spontaneous emission effects in...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S050124

Reexamination Certificate

active

11026095

ABSTRACT:
An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

REFERENCES:
patent: 5475701 (1995-12-01), Hibb-Brenner
patent: 5606572 (1997-02-01), Swirhun et al.
patent: 5757836 (1998-05-01), Jiang et al.
patent: 5914976 (1999-06-01), Jayaraman et al.
patent: 5978401 (1999-11-01), Morgan
patent: 6023485 (2000-02-01), Claisse et al.
patent: 6707027 (2004-03-01), Liess et al.
patent: 6717972 (2004-04-01), Steinle et al.
patent: 2003/0021322 (2003-01-01), Steinle et al.
patent: 2003/0057355 (2003-03-01), Wang
patent: 2005/0041714 (2005-02-01), Kim
patent: 2005/0201665 (2005-09-01), Manderscheid
patent: WO 02/37124 (2002-05-01), None
patent: WO 02/37410 (2002-05-01), None
patent: WO 02/37411 (2002-05-01), None
U.S. Appl. No. 11/027,383, filed Dec. 30, 2004 entitled “Geometric Optimizations for Reducing Spontaneous Emissions in Photodiodes.”
U.S. Appl. No. 11/026,355, filed Dec. 30, 2004 entitled “Optical Apertures for Reducing Spontaneous Emissions in Photodiodes.”
U.S. Appl. No. 11/027,717, filed Dec. 30, 2004 entitled “Optimizing Mirror Reflectivity for Reducing Spontaneous Emissions in Photodiodes.”
U.S. Appl. No. 11/026,385, filed Dec. 30, 2004 entitled “Mirrors for Reducing the Effects of Spontaneous Emissions in Photodiodes.”
U.S. Appl. No. 11/026,495, filed Dec. 30, 2004 entitled “Photodiode Bandgaps for Reducing Spontaneous Emissions in Photodiodes.”

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